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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1430 DESCRIPTION *With TO-220F package *High DC current gain. *Low collector saturation voltage. *DARLINGTON APPLICATIONS *Ideal for motor drivers and solenoid drivers In such as OA and FA equipment PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -10 -0.5 20 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 2000 500 MIN 2SB1430 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX -1.5 -2.0 -1.0 -5.0 20000 UNIT V V A mA 60 80 pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A ; IB1=-IB2=-2mA VCC@-50V;RL=25A 0.5 1.0 1.0 s s s hFE-1 Classifications M 2000-5000 L 4000-10000 K 8000-20000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1430 Fig.2 Outline dimensions 3 |
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